Güler Marifi
Department of Computer Engineering, Eastern Mediterranean University, Famagusta, Mersin-10, Turkey.
J Comput Neurosci. 2008 Oct;25(2):211-27. doi: 10.1007/s10827-008-0074-x. Epub 2008 Feb 8.
Recently, a physical approach for the description of neuronal dynamics under the influence of ion channel noise was proposed in the realm of dissipative stochastic mechanics (Güler, Phys Rev E 76:041918, 2007). Led by the presence of a multiple number of gates in an ion channel, the approach establishes a viewpoint that ion channels are exposed to two kinds of noise: the intrinsic noise, associated with the stochasticity in the movement of gating particles between the inner and the outer faces of the membrane, and the topological noise, associated with the uncertainty in accessing the permissible topological states of open gates. Renormalizations of the membrane capacitance and of a membrane voltage dependent potential function were found to arise from the mutual interaction of the two noisy systems. The formalism therein was scrutinized using a special membrane with some tailored properties giving the Rose-Hindmarsh dynamics in the deterministic limit. In this paper, the resultant computational neuron model of the above approach is investigated in detail numerically for its dynamics using time-independent input currents. The following are the major findings obtained. The intrinsic noise gives rise to two significant coexisting effects: it initiates spiking activity even in some range of input currents for which the corresponding deterministic model is quiet and causes bursting in some other range of input currents for which the deterministic model fires tonically. The renormalization corrections are found to augment the above behavioral transitions from quiescence to spiking and from tonic firing to bursting, and, therefore, the bursting activity is found to take place in a wider range of input currents for larger values of the correction coefficients. Some findings concerning the diffusive behavior in the voltage space are also reported.
最近,在耗散随机力学领域提出了一种用于描述离子通道噪声影响下神经元动力学的物理方法(居勒尔,《物理评论E》76:041918,2007)。受离子通道中多个门的存在所引导,该方法确立了一种观点,即离子通道会受到两种噪声的影响:内在噪声,与门控粒子在膜内外表面之间移动的随机性相关;以及拓扑噪声,与开放门的允许拓扑状态的不确定性相关。发现膜电容和膜电压相关势函数的重整化源于两个噪声系统的相互作用。其中的形式体系使用具有一些定制特性的特殊膜进行了仔细研究,该膜在确定性极限下呈现罗斯 - 欣德马什动力学。在本文中,使用与时间无关的输入电流,对上述方法所得的计算神经元模型的动力学进行了详细的数值研究。以下是获得的主要发现。内在噪声会产生两种显著共存的效应:即使在相应确定性模型处于静息状态的某些输入电流范围内,它也会引发尖峰活动,并且在确定性模型产生持续发放的其他一些输入电流范围内导致爆发。发现重整化修正会增强上述从静息到尖峰以及从持续发放到爆发的行为转变,因此,对于较大的修正系数值,爆发活动会在更宽的输入电流范围内发生。还报告了一些关于电压空间中扩散行为的发现。