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The effect of an SiO(2) buffer layer on the SAW properties of ZnO/SiO(2)/GaAs structure.

作者信息

Shih W C, Wu M S, Shimizu M, Shoisaki T

机构信息

Dept. of Electr. Eng., Tatung Inst. of Technol., Taipei.

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 1993;40(6):642-7. doi: 10.1109/58.248206.

DOI:10.1109/58.248206
PMID:18263229
Abstract

The effect of an SiO(2) buffer layer on the surface acoustic wave (SAW) properties of ZnO/SiO(2)/GaAs structure is examined. Both theoretical and experimental results show that the coupling coefficient is increased appreciably by providing an SiO(2 ) film between the ZnO film and the GaAs substrate. Adding an SiO (2) film is also beneficial to the promotion of quality of ZnO thin film. The results could be useful for the further development of monolithic SAW devices.

摘要

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