Fujii Eiji, Takayama Ryoichi, Nomura Kouji, Murata Akiko, Hirasawa Taku, Tomozawa Atsushi, Fujii Satoru, Kamada Takeshi, Torii Hideo
Advanced Technology Research Laboratories, Matsushita Electric Industrial Company Ltd., Seika-cho, Soraku-gun, Kyoto, Japan.
IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Dec;54(12):2431. doi: 10.1109/TUFFC.2007.556.
Preparation of (001)-oriented Pb(Zr,Ti)O(3) (PZT) thin films and their applications to a sensor and actuators were investigated. These thin films, which have a composition close to the morphotropic phase boundary, were epitaxially grown on (100)MgO single-crystal substrates by RF magnetron sputtering. These (001)-oriented PZT thin films could be obtained on various kinds of substrates, such as glass and Si, by introducing (100)-oriented MgO buffer layers. In addition, the (001) oriented PZT thin films could be obtained on Si substrates without buffer layers by optimizing the sputtering conditions. All of these thin films showed excellent piezoelectric properties without the need for poling treatment. The PZT thin films on the MgO substrates had a high piezoelectric coefficient, d(31), of -100 pm/V, and an extremely low relative dielectric constant, epsilon(r), of 240. The PZT thin films on Si substrate had a very high d(31) of -150 pm/V and an epsilon(r) = 700. These PZT thin films were applied to an angular rate sensor with a tuning fork in a car navigation system, to a dual-stage actuator for positioning the magnetic head of a high-density hard disk drive, and to an actuator for an inkjet printer head for industrial on-demand printers.
研究了（001）取向的锆钛酸铅（Pb(Zr,Ti)O₃，PZT）薄膜的制备及其在传感器和致动器中的应用。这些薄膜的成分接近准同型相界，通过射频磁控溅射在（100）MgO单晶衬底上外延生长。通过引入（100）取向的MgO缓冲层，可以在各种衬底上，如玻璃和硅上获得这些（001）取向的PZT薄膜。此外，通过优化溅射条件，无需缓冲层也能在硅衬底上获得（001）取向的PZT薄膜。所有这些薄膜都表现出优异的压电性能，无需极化处理。MgO衬底上的PZT薄膜具有-100 pm/V的高压电系数d(31)和240的极低相对介电常数ε(r)。硅衬底上的PZT薄膜具有-150 pm/V的非常高的d(31)和ε(r)=700。这些PZT薄膜应用于汽车导航系统中带有音叉的角速率传感器、用于定位高密度硬盘驱动器磁头的双级致动器以及用于工业按需打印机的喷墨打印机头的致动器。
