Nguyen T Tho, Inoue Akihiro, Noda Minoru, Okuyama Masanori
Osaka University, Osaka, Japan.
IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Dec;54(12):2603-7. doi: 10.1109/TUFFC.2007.586.
Bi(4)Ti(3)O(12) (BIT) thin films were prepared by low temperature hydrothermal synthesis on Pt/TiO(x)/SiO(2)/Si. Bi(4)Ti(3)O(12) or TiO(2) gel solution was formed and annealed at 350 degrees C. The BIT thin films were crystallized as a Bi-layer structural ferroelectric. During the hydrothermal treatment, the TiO(2) anatase (101) peak appears and seems to play the role as an intermediate layer. Randomly oriented BIT thin films were obtained. As a result, the BIT thin films have ferroelectric property. The as-deposited BIT thin films include spherical grains with the grain size of 120 nm.
通过低温水热合成法在Pt/TiO(x)/SiO(2)/Si上制备了Bi(4)Ti(3)O(12)（BIT）薄膜。形成了Bi(4)Ti(3)O(12)或TiO(2)凝胶溶液，并在350℃下进行退火处理。BIT薄膜结晶为双层结构铁电体。在水热处理过程中，出现了TiO(2)锐钛矿（101）峰，其似乎起到中间层的作用。获得了随机取向的BIT薄膜。结果表明，BIT薄膜具有铁电性能。沉积态的BIT薄膜包含粒径为120nm的球形晶粒。
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