Laudise R A, Barns R L
ATandT Bell Labs., Murray Hill, NJ.
IEEE Trans Ultrason Ferroelectr Freq Control. 1988;35(3):277-87. doi: 10.1109/58.20448.
The perfection of cultured quartz and its connection to growth processes is reviewed. The principal macroscopic imperfection, ;creative flawing', is shown to be the hydrothermal crystal growth analog of dendritic growth and can be eliminated by the proper choice of growth direction and manipulation of conditions to minimize the effects of diffusion. Acoustic loss (1/Q) is proportional to the infrared absorption at the OH stretch frequency and is most likely due to a small (a few hundred molecules) number of aggregates of H(2)O, although lesser quantities of OH, which charge-compensate Al(+3) and Fe(+3) at Si(+4) sites, are also present. Techniques for preparing cultured quartz with Q equivalent to the best natural quartz are now routine. Radiation hardness is discussed in terms of impurity content. Impurity-decorated dislocations are shown to be the most probable cause of latent etch channels. Dislocations propagate from the seed but may be initiated by particulate inclusions and/or lattice parameter mismatch between the growth and the seed. Dislocation-free material can be grown by seed selection and procedures that eliminate inclusions.
本文综述了人造石英的完善程度及其与生长过程的联系。主要的宏观缺陷“创造性瑕疵”被证明是枝晶生长的水热晶体生长类似物，通过适当选择生长方向和控制条件以最小化扩散影响，可以消除该缺陷。声损耗（1/Q）与OH伸缩频率处的红外吸收成正比，最有可能是由于少量（几百个分子）的H₂O聚集体引起的，不过在Si⁺⁴位点电荷补偿Al⁺³和Fe⁺³的少量OH也存在。制备Q值等同于最佳天然石英的人造石英的技术现已成为常规方法。从杂质含量方面讨论了辐射硬度。杂质修饰的位错被证明是潜在蚀刻通道最可能的原因。位错从籽晶传播，但可能由颗粒夹杂物和/或生长与籽晶之间的晶格参数不匹配引发。通过籽晶选择和消除夹杂物的程序可以生长出无位错材料。
