Takado N, Matsushita D, Fujino I, Hatayama A, Tobari H, Inoue T
Keio University, Yokohama, Japan.
Rev Sci Instrum. 2008 Feb;79(2 Pt 2):02A503. doi: 10.1063/1.2802583.
Production and transport processes of the H(0) atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under a Cs-seeded condition to obtain a spatial distribution of surface-produced H(-) ions. In this analysis, we focus on the effect of the energy relaxation of the H(0) atoms at the wall on the H(-) ion production from the H(0) atoms. The result indicates that, by considering the energy relaxation of the H(0) atoms at the wall, the production profile of the surface-produced H(-) ion is well reflected in the production profile of the H(0) atom production.
