Effect of energy relaxation of H(0) atoms at the wall on the production profile of H(-) ions in large negative ion sources. - Suppr | 超能文献

Effect of energy relaxation of H(0) atoms at the wall on the production profile of H(-) ions in large negative ion sources.

作者信息

Takado N, Matsushita D, Fujino I, Hatayama A, Tobari H, Inoue T

机构信息

Keio University, Yokohama, Japan.

出版信息

Rev Sci Instrum. 2008 Feb;79(2 Pt 2):02A503. doi: 10.1063/1.2802583.

DOI:10.1063/1.2802583

Abstract

Production and transport processes of the H(0) atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under a Cs-seeded condition to obtain a spatial distribution of surface-produced H(-) ions. In this analysis, we focus on the effect of the energy relaxation of the H(0) atoms at the wall on the H(-) ion production from the H(0) atoms. The result indicates that, by considering the energy relaxation of the H(0) atoms at the wall, the production profile of the surface-produced H(-) ion is well reflected in the production profile of the H(0) atom production.

摘要

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