Kim Chan Kyung, Cho Soo Gyeong, Kim Chang Kon, Park Hyung-Yeon, Zhang Hui, Lee Hai Whang
Department of Chemistry and High Energy Material Research Center, Inha University, Incheon 402-751, Korea.
J Comput Chem. 2008 Aug;29(11):1818-24. doi: 10.1002/jcc.20943.
The densities of high energetic molecules in the solid state were calculated with a simplified scheme based on molecular surface electrostatic potentials (MSEP). The MSEP scheme for density estimation, originally developed by Politzer et al., was further modified to calculate electrostatic potential on a simpler van der Waals surface. Forty-one energetic molecules containing at least one nitro group were selected from among a variety of molecular types and density values, and were used to test the suitability of the MSEP scheme for predicting the densities of solid energetic molecules. For comparison purposes, we utilized the group additivity method (GAM) incorporating the parameter sets developed by Stine (Stine-81) and by Ammon (Ammon-98 and -00). The absolute average error in densities from our MSEP scheme was 0.039 g/cc. The results based on our MSEP scheme were slightly better than the GAM results. In addition, the errors in densities generated by the MSEP scheme were almost the same for various molecule types, while those predicted by GAM were somewhat dependent upon the molecule types.
利用基于分子表面静电势(MSEP)的简化方案计算了高能分子在固态下的密度。最初由波利策等人开发的用于密度估计的MSEP方案经过进一步修改,以便在更简单的范德华表面上计算静电势。从各种分子类型和密度值中筛选出41种含有至少一个硝基的高能分子,用于测试MSEP方案预测固体高能分子密度的适用性。为了进行比较,我们采用了基团加和法(GAM),该方法纳入了斯汀(斯汀-81)以及阿蒙(阿蒙-98和-00)开发的参数集。我们的MSEP方案计算得到的密度绝对平均误差为0.039 g/cc。基于我们的MSEP方案得到的结果略优于GAM的结果。此外,MSEP方案产生的密度误差在各种分子类型中几乎相同,而GAM预测的误差在一定程度上取决于分子类型。