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钌上的外延石墨烯。

Epitaxial graphene on ruthenium.

作者信息

Sutter Peter W, Flege Jan-Ingo, Sutter Eli A

机构信息

Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA.

出版信息

Nat Mater. 2008 May;7(5):406-11. doi: 10.1038/nmat2166. Epub 2008 Apr 6.

Abstract

Graphene has been used to explore the fascinating electronic properties of ideal two-dimensional carbon, and shows great promise for quantum device architectures. The primary method for isolating graphene, micromechanical cleavage of graphite, is difficult to scale up for applications. Epitaxial growth is an attractive alternative, but achieving large graphene domains with uniform thickness remains a challenge, and substrate bonding may strongly affect the electronic properties of epitaxial graphene layers. Here, we show that epitaxy on Ru(0001) produces arrays of macroscopic single-crystalline graphene domains in a controlled, layer-by-layer fashion. Whereas the first graphene layer indeed interacts strongly with the metal substrate, the second layer is almost completely detached, shows weak electronic coupling to the metal, and hence retains the inherent electronic structure of graphene. Our findings demonstrate a route towards rational graphene synthesis on transition-metal templates for applications in electronics, sensing or catalysis.

摘要

石墨烯已被用于探索理想二维碳的迷人电子特性,并在量子器件架构方面展现出巨大潜力。目前分离石墨烯的主要方法——石墨的微机械剥离,难以扩大规模用于实际应用。外延生长是一种有吸引力的替代方法,但要获得具有均匀厚度的大面积石墨烯畴仍然是一项挑战,并且衬底键合可能会强烈影响外延石墨烯层的电子特性。在此,我们表明在Ru(0001)上进行外延生长能够以可控的逐层方式产生宏观单晶石墨烯畴阵列。虽然第一层石墨烯确实与金属衬底有强烈相互作用,但第二层几乎完全分离,与金属的电子耦合较弱,因此保留了石墨烯固有的电子结构。我们的研究结果展示了一条在过渡金属模板上合理合成石墨烯的途径,可用于电子学、传感或催化等领域。

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