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Direct coupling of pulsed radio frequency and pulsed high power in novel pulsed power system for plasma immersion ion implantation.

作者信息

Gong Chunzhi, Tian Xiubo, Yang Shiqin, Fu Ricky K Y, Chu Paul K

机构信息

State Key Laboratory of Advanced Welding Production and Technology, School of Materials Science and Engineering, Harbin Institute of Technology, 150001 Harbin, People's Republic of China.

出版信息

Rev Sci Instrum. 2008 Apr;79(4):043501. doi: 10.1063/1.2906220.

DOI:10.1063/1.2906220
PMID:18447526
Abstract

A novel power supply system that directly couples pulsed high voltage (HV) pulses and pulsed 13.56 MHz radio frequency (rf) has been developed for plasma processes. In this system, the sample holder is connected to both the rf generator and HV modulator. The coupling circuit in the hybrid system is composed of individual matching units, low pass filters, and voltage clamping units. This ensures the safe operation of the rf system even when the HV is on. The PSPICE software is utilized to optimize the design of circuits. The system can be operated in two modes. The pulsed rf discharge may serve as either the seed plasma source for glow discharge or high-density plasma source for plasma immersion ion implantation (PIII). The pulsed high-voltage glow discharge is induced when a rf pulse with a short duration or a larger time interval between the rf and HV pulses is used. Conventional PIII can also be achieved. Experiments conducted on the new system confirm steady and safe operation.

摘要

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