Wu Zhongzhen, Tian Xiubo, Shi Jingwei, Wang Zeming, Gong Chunzhi, Yang Shiqin, Chu Paul K
State Key Laboratory of Advanced Welding Production and Technology, Harbin Institute of Technology, Harbin 150001, China.
Rev Sci Instrum. 2011 Mar;82(3):033511. doi: 10.1063/1.3565175.
A novel plasma immersion ion implantation technique based on high power pulsed magnetron sputtering (HPPMS) discharge that can produce a high density metal plasma is described. The metal plasma is clean and does not suffer from contamination from macroparticles, and the process can be readily scaled up for industrial production. The hardware, working principle, and operation modes are described. A matching circuit is developed to modulate the high-voltage and HPPMS pulses to enable operation under different modes such as simultaneous implantation and deposition, pure implantation, and selective implantation. To demonstrate the efficacy of the system and technique, CrN films with a smooth and dense surface without macroparticles were produced. An excellent adhesion with a critical load of 59.9 N is achieved for the pure implantation mode.
描述了一种基于高功率脉冲磁控溅射（HPPMS）放电的新型等离子体浸没离子注入技术，该技术可产生高密度金属等离子体。该金属等离子体清洁，不受大颗粒污染，并且该工艺易于扩大规模用于工业生产。介绍了硬件、工作原理和操作模式。开发了一种匹配电路来调制高压和HPPMS脉冲，以实现同时注入和沉积、纯注入和选择性注入等不同模式下的操作。为了证明该系统和技术的有效性，制备了表面光滑致密且无大颗粒的CrN薄膜。在纯注入模式下，实现了59.9 N的临界载荷的优异附着力。
