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V₂O₅对(Na₀.₅K₀.₅)NbO₃陶瓷烧结行为、微观结构及电学性能的影响

Effect of V(2)O(5) on the sintering behavior, microstructure, and electrical properties of (Na(0.5)K(0.5))NbO(3) ceramics.

作者信息

Pan H, Jin D, Wu W, Cheng J, Meng Z

机构信息

Department of Electronic Information Material, School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, P. R. China.

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2008 May;55(5):994-9. doi: 10.1109/TUFFC.2008.745.

Abstract

Well-sintered (Na(0.5)K(0.5))NbO(3)-x mol% V(2)O(5) ceramics (abbreviated as NKN-V) with fine electrical properties were successfully prepared by conventional solid-state reaction through the careful control of processing conditions. The sintering behavior, phase structure, and electrical properties of the V(2)O(5)-doped NKN ceramics were investigated. Results show that when the V(2)O(5) content is 0.6 mol%, the NKN ceramics attained the maximum density of 4.46 g/cm(3) (about 98.9% of the theoretical density) at 1060 degrees C, and therefore possessed enhanced electrical properties. But when the V(2)O(5) content continued increasing, the density decreased. The secondary phase (Na(2)V (6)O(16)) could be detected by XRD analysis in all samples except x = 0 mol%. The Curie temperature of the NKN-based materials was found to decrease with the increase of V(2)O(5). The dielectric properties of NKN ceramics doped with 0.6 and 0.9 mol% V(2)O(5) were better than that of pure NKN ceramics. In addition, annealing treatment was proved to be an effective technique for improving dielectric properties and reducing the leakage current density.

摘要

通过仔细控制工艺条件,采用传统固相反应成功制备出具有良好电学性能的烧结良好的(Na(0.5)K(0.5))NbO(3)-x mol% V(2)O(5)陶瓷(简称为NKN-V)。研究了V(2)O(5)掺杂的NKN陶瓷的烧结行为、相结构和电学性能。结果表明,当V(2)O(5)含量为0.6 mol%时,NKN陶瓷在1060℃达到最大密度4.46 g/cm(3)(约为理论密度的98.9%),因此具有增强的电学性能。但当V(2)O(5)含量继续增加时,密度降低。除x = 0 mol%外,所有样品的XRD分析均能检测到第二相(Na(2)V (6)O(16))。发现基于NKN的材料的居里温度随V(2)O(5)的增加而降低。掺杂0.6和0.9 mol% V(2)O(5)的NKN陶瓷的介电性能优于纯NKN陶瓷。此外,退火处理被证明是改善介电性能和降低漏电流密度的有效技术。

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