Kempf J G, Marohn J A, Carson P J, Shykind D A, Hwang J Y, Miller M A, Weitekamp D P
A A Noyes Laboratory of Chemical Physics, M/S 127-72, California Institute of Technology, Pasadena, CA 91125, USA.
Rev Sci Instrum. 2008 Jun;79(6):063904. doi: 10.1063/1.2936257.
Optical nuclear magnetic resonance (ONMR) is a powerful probe of electronic properties in III-V semiconductors. Larmor-beat detection (LBD) is a sensitivity optimized, time-domain NMR version of optical detection based on the Hanle effect. Combining LBD ONMR with the line-narrowing method of POWER (perturbations observed with enhanced resolution) NMR further enables atomically detailed views of local electronic features in III-Vs. POWER NMR spectra display the distribution of resonance shifts or line splittings introduced by a perturbation, such as optical excitation or application of an electric field, that is synchronized with a NMR multiple-pulse time-suspension sequence. Meanwhile, ONMR provides the requisite sensitivity and spatial selectivity to isolate local signals within macroscopic samples. Optical NMR, LBD, and the POWER method each introduce unique demands on instrumentation. Here, we detail the design and implementation of our system, including cryogenic, optical, and radio-frequency components. The result is a flexible, low-cost system with important applications in semiconductor electronics and spin physics. We also demonstrate the performance of our systems with high-resolution ONMR spectra of an epitaxial AlGaAs/GaAs heterojunction. NMR linewidths down to 4.1 Hz full width at half maximum were obtained, a 10(3)-fold resolution enhancement relative any previous optically detected NMR experiment.
光核磁共振(ONMR)是探测III-V族半导体电子特性的有力手段。拉莫拍频检测(LBD)是一种基于汉勒效应的、灵敏度优化的时域核磁共振光学检测方法。将LBD ONMR与POWER(高分辨率观测扰动)核磁共振的线窄化方法相结合,能够进一步实现对III-V族半导体中局部电子特征的原子级详细观测。POWER核磁共振谱展示了由诸如光激发或施加电场等扰动引入的共振位移或谱线分裂的分布情况,这些扰动与核磁共振多脉冲时间暂停序列同步。同时,ONMR提供了必要的灵敏度和空间选择性,以分离宏观样品中的局部信号。光学核磁共振、LBD和POWER方法对仪器设备各有独特要求。在此,我们详细介绍我们系统的设计与实现,包括低温、光学和射频组件。最终得到了一个灵活、低成本的系统,在半导体电子学和自旋物理学中有重要应用。我们还通过外延AlGaAs/GaAs异质结的高分辨率ONMR谱展示了我们系统的性能。获得了低至4.1赫兹半高全宽的核磁共振线宽,相对于以往任何光学检测核磁共振实验,分辨率提高了1000倍。