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石墨烯纳米带边缘的σ和π缺陷:构建自旋过滤器。

sigma- and pi-defects at graphene nanoribbon edges: building spin filters.

作者信息

Martins Thiago B, da Silva Antonio J R, Miwa Roberto H, Fazzio Adalberto

机构信息

Instituto de Fisica, Universidade de Sao Paulo, CP 66318, 05315-970, Sao Paulo, SP, Brazil.

出版信息

Nano Lett. 2008 Aug;8(8):2293-8. doi: 10.1021/nl800991j. Epub 2008 Jul 23.

Abstract

The presence of certain kinds of defects at the edges of monohydrogenated zigzag graphene nanoribbons changes dramatically the charge transport properties inducing a spin-polarized conductance. Using an approach based on density functional theory and nonequilibrium Green's function formalism to calculate the transmittance, we classify the defects in different classes depending on their distinct transport properties: (i) sigma-defects, which do not affect the transmittance close to the Fermi energy (EF); and (ii) pi-defects, which cause a spin polarization of the transmittance and that can be further divided into either electron or hole defects if the spin transport polarization results in larger transmittance for the up or down spin channel, respectively.

摘要

单氢化锯齿形石墨烯纳米带边缘存在某些种类的缺陷会极大地改变电荷传输特性,从而诱导出自旋极化电导。我们采用基于密度泛函理论和非平衡格林函数形式的方法来计算透射率,根据不同缺陷独特的传输特性将其分为不同类别:(i) σ缺陷,其在费米能(EF)附近不影响透射率;(ii) π缺陷,其会导致透射率的自旋极化,并且如果自旋传输极化分别导致向上或向下自旋通道的透射率更大,则可进一步分为电子缺陷或空穴缺陷。

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