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External control of a metal-insulator transition in GaMnAs wires.

作者信息

Nguyen Anh Kiet, Brataas Arne

机构信息

Department of Physics, Norwegian University of Science and Technology, NO-7491, Trondheim, Norway.

出版信息

Phys Rev Lett. 2008 Jul 4;101(1):016801. doi: 10.1103/PhysRevLett.101.016801. Epub 2008 Jun 30.

DOI:10.1103/PhysRevLett.101.016801
PMID:18764136
Abstract

Quantum transport in disordered ferromagnetic (III,Mn)V semiconductors is studied theoretically. Mesoscopic wires exhibit an Anderson disorder-induced metal-insulator transition that can be controlled by a weak external magnetic field. This metal-insulator transition should also occur in other materials with large anisotropic magnetoresistance effects. The transition can be useful for studies of zero-temperature quantum critical phase transitions and fundamental material properties.

摘要

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