Mendonça Ferreira L, Park T, Sidorov V, Nicklas M, Bittar E M, Lora-Serrano R, Hering E N, Ramos S M, Fontes M B, Baggio-Saitovich E, Lee Hanoh, Sarrao J L, Thompson J D, Pagliuso P G
Instituto de Física Gleb Wataghin, UNICAMP, C.P. 6165, 13083-970, Campinas, Brazil.
Phys Rev Lett. 2008 Jul 4;101(1):017005. doi: 10.1103/PhysRevLett.101.017005. Epub 2008 Jul 3.
Pressure- and temperature-dependent heat capacity and electrical resistivity experiments on Sn- and La-doped CeRhIn5 are reported for two samples with specific concentrations, Ce(0.90)La(0.10)RhIn5 and CeRhIn(4.84)Sn(0.16), which present the same TN=2.8 K. The obtained P-T phase diagrams for doped CeRhIn5 compared to that for the pure compound show that Sn doping shifts the diagram to lower pressures while La doping does exactly the opposite, indicating that the important energy scale to define the pressure range for superconductivity in CeRhIn5 is the strength of the on-site Kondo coupling.
报道了对具有特定浓度的两个样品Ce(0.90)La(0.10)RhIn5和CeRhIn(4.84)Sn(0.16)进行的与压力和温度相关的热容量和电阻率实验，这两个样品呈现相同的TN = 2.8 K。与纯化合物相比，所获得的掺杂铈铑铟五的P - T相图表明，锡掺杂使相图向更低压力移动，而镧掺杂则恰恰相反，这表明定义铈铑铟五中超导压力范围的重要能量尺度是在位近藤耦合的强度。
