碲掺杂诱导的WO₃长波长瞬态光响应增强

Enhanced long-wavelength transient photoresponsiveness of WO3 induced by tellurium doping.

作者信息

Yang Bin, Luca Vittorio

机构信息

Inst. of Materials Eng., Australian Nuclear Science and Technology Organisation, PMB 1, Menai, NSW 2234, Australia.

出版信息

Chem Commun (Camb). 2008 Oct 7(37):4454-6. doi: 10.1039/b807629d. Epub 2008 Jul 29.

DOI:10.1039/b807629d

PMID:18802588

Abstract

Tungsten trioxide (WO3) films doped with 0.25 atom% tellurium synthesised by a sol-gel route, show strong transient photocurrents under chopped sub-bandgap illumination (hnu=1.8 eV<Eg) at low bias potentials from 0.2 to 0.7 V; such effects are ascribed to the presence of a localized narrow band (NB) between the VB and the CB in this material.

摘要

通过溶胶-凝胶法合成的掺杂0.25原子%碲的三氧化钨（WO₃）薄膜，在0.2至0.7 V的低偏置电位下，于斩波亚带隙光照（hν = 1.8 eV < Eg）下显示出强烈的瞬态光电流；这种效应归因于该材料价带和导带之间存在局部窄带（NB）。