Bahadur Ali, Anjum Tehseen Ali, Roosh Mah, Iqbal Shahid, Alrbyawi Hamad, Qayyum Muhammad Abdul, Ahmad Zaheer, Al-Anazy Murefah Mana, Elkaeed Eslam B, Pashameah Rami Adel, Alzahrani Eman, Farouk Abd-ElAziem
Department of Chemistry, College of Science and Technology, Wenzhou-Kean University, Wenzhou 325060, China.
Nanomagnetism Laboratory, Department of Physics, COMSATS University Islamabad, Islamabad 45550, Pakistan.
Molecules. 2022 Oct 17;27(20):6976. doi: 10.3390/molecules27206976.
Tungsten trioxide (WO) is mainly studied as an electrochromic material and received attention due to N-type oxide-based semiconductors. The magnetic, structural, and optical behavior of pristine WO and gadolinium (Gd)-doped WO are being investigated using density functional theory. For exchange-correlation potential energy, generalized gradient approximation (GGA+U) is used in our calculations, where U is the Hubbard potential. The estimated bandgap of pure WO is 2.5 eV. After the doping of Gd, some states cross the Fermi level, and WO acts as a degenerate semiconductor with a 2 eV bandgap. Spin-polarized calculations show that the system is antiferromagnetic in its ground state. The WO material is a semiconductor, as there is a bandgap of 2.5 eV between the valence and conduction bands. The Gd-doped WO's band structure shows few states across the Fermi level, which means that the material is metal or semimetal. After the doping of Gd, WO becomes the degenerate semiconductor with a bandgap of 2 eV. The energy difference between ferromagnetic (FM) and antiferromagnetic (AFM) configurations is negative, so the Gd-doped WO system is AFM. The pure WO is nonmagnetic, where the magnetic moment in the system after doping Gd is 9.5599575 μB.
三氧化钨(WO)主要作为一种电致变色材料进行研究,并因其基于N型氧化物的半导体特性而受到关注。目前正在使用密度泛函理论研究原始WO和钆(Gd)掺杂的WO的磁性、结构和光学行为。对于交换关联势能,我们在计算中使用广义梯度近似(GGA+U),其中U为哈伯德势。估计纯WO的带隙为2.5电子伏特。掺杂Gd后,一些态穿过费米能级,WO成为带隙为2电子伏特的简并半导体。自旋极化计算表明,该系统在基态下是反铁磁性的。WO材料是一种半导体,因为价带和导带之间存在2.5电子伏特的带隙。Gd掺杂的WO的能带结构显示费米能级附近有少数态,这意味着该材料是金属或半金属。掺杂Gd后,WO成为带隙为2电子伏特的简并半导体。铁磁(FM)和反铁磁(AFM)构型之间的能量差为负,因此Gd掺杂的WO系统是反铁磁性的。纯WO是非磁性的,掺杂Gd后系统中的磁矩为9.5599575 μB。