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Status of trivalent copper and charge-transfer excitons in high-TC cuprates.

作者信息

Pouchard Michel, Doumerc Jean-Pierre, Villesuzanne Antoine

机构信息

ICMCB, CNRS, Bordeaux I University, 87 Av. Dr. A. Schweitzer, 33608 Pessac Cedex, France.

出版信息

Inorg Chem. 2008 Oct 6;47(19):8487-97. doi: 10.1021/ic801031y.

Abstract

A chemical bonding approach based on tight-binding cluster and band calculations, taking into account on-site Coulomb repulsion (Hubbard U parameter) to differentiate doubly and singly occupied states, was applied to high- T C superconducting cuprates and related compounds. This work provides rational insight and explanations for issues such as (i) the actual oxidation number Cu (I+) for formally trivalent copper in oxides such as La 2Li 1/2Cu 1/2O 4, (ii) the dominant oxygen character of the doping holes in (CuO 2) ( n- ) planes, (iii) the Mott-Hubbard character of the insulator-to-metal transition triggered by hole doping, leading to an oxygen-to-copper charge transfer of avalanche type, (iv) the occurrence of an excitonic phase with anisotropic Frenkel-type excitons, (v) the role of Coulomb interactions between excitons and between doping holes and their exciton surroundings, and (vi) the on-time pairing of doping holes by means of an "excitonic glue".

摘要

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