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变形螺旋铁电液晶弱锚定表面中的记忆效应。

Memory effect in weakly anchored surfaces of deformed helix ferroelectric liquid crystals.

作者信息

Prakash J, Choudhary A, Kaur S, Mehta D S, Biradar A M

机构信息

National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110 012, India.

出版信息

Phys Rev E Stat Nonlin Soft Matter Phys. 2008 Aug;78(2 Pt 1):021707. doi: 10.1103/PhysRevE.78.021707. Epub 2008 Aug 15.

Abstract

A wide-range memory effect in deformed helix ferroelectric liquid crystals (DHFLCs) has been investigated by electro-optical and textural methods. A comparative study has been performed on strongly and weakly anchored surfaces of DHFLC cells. The saturation voltage has been compared in both types of cells by studying the variation of tilt angle and spontaneous polarization with applied voltage. The long-lasting memory effect has been observed in untreated (weakly anchored) cells. It has been proposed that perfect memory in DHFLC cells without any surface treatment is due to the possibility of the absence of depolarization and ionic charges over the surfaces of the cells.

摘要

通过电光和织构方法研究了变形螺旋铁电液晶(DHFLCs)中的宽范围记忆效应。对DHFLC盒的强锚定和弱锚定表面进行了对比研究。通过研究倾斜角和自发极化随施加电压的变化,比较了两种类型盒中的饱和电压。在未处理(弱锚定)的盒中观察到了持久的记忆效应。有人提出,未经任何表面处理的DHFLC盒中的完美记忆是由于盒表面不存在去极化和离子电荷的可能性。

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