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细硅纳米线的热导率

Thermal conductance of thin silicon nanowires.

作者信息

Chen Renkun, Hochbaum Allon I, Murphy Padraig, Moore Joel, Yang Peidong, Majumdar Arun

机构信息

Department of Mechanical Engineering, University of California, Berkeley, California 94720, USA.

出版信息

Phys Rev Lett. 2008 Sep 5;101(10):105501. doi: 10.1103/PhysRevLett.101.105501. Epub 2008 Sep 2.

Abstract

The thermal conductance of individual single crystalline silicon nanowires with diameters less than 30 nm has been measured from 20 to 100 K. The observed thermal conductance shows unusual linear temperature dependence at low temperatures, as opposed to the T3 dependence predicted by the conventional phonon transport model. In contrast to previous models, the present study suggests that phonon-boundary scattering is highly frequency dependent, and ranges from nearly ballistic to completely diffusive, which can explain the unexpected linear temperature dependence.

摘要

直径小于30纳米的单根单晶硅纳米线的热导率已在20至100开尔文范围内进行了测量。观察到的热导率在低温下呈现出不同寻常的线性温度依赖性,这与传统声子输运模型预测的T³依赖性相反。与先前的模型不同,本研究表明声子-边界散射高度依赖于频率,范围从近乎弹道式到完全扩散式,这可以解释这种意外的线性温度依赖性。

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