Kamiya Koshi, Kayama Kazuto, Nobuoka Masaki, Sakaguchi Shugo, Sakurai Tsuneaki, Kawata Minori, Tsutsui Yusuke, Suda Masayuki, Idesaki Akira, Koshikawa Hiroshi, Sugimoto Masaki, Lakshmi G B V S, Avasthi D K, Seki Shu
Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Kyoto, Japan.
Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma, Japan.
Nat Commun. 2021 Jun 29;12(1):4025. doi: 10.1038/s41467-021-24335-x.
The critical dimension of semiconductor devices is approaching the single-nm regime, and a variety of practical devices of this scale are targeted for production. Planar structures of nano-devices are still the center of fabrication techniques, which limit further integration of devices into a chip. Extension into 3D space is a promising strategy for future; however, the surface interaction in 3D nanospace make it hard to integrate nanostructures with ultrahigh aspect ratios. Here we report a unique technique using high-energy charged particles to produce free-standing 1D organic nanostructures with high aspect ratios over 100 and controlled number density. Along the straight trajectory of particles penetrating the films of various sublimable organic molecules, 1D nanowires were formed with approximately 10~15 nm thickness and controlled length. An all-dry process was developed to isolate the nanowires, and planar or coaxial heterojunction structures were built into the nanowires. Electrical and structural functions of the developed standing nanowire arrays were investigated, demonstrating the potential of the present ultrathin organic nanowire systems.
半导体器件的关键尺寸正接近单纳米量级,多种该尺度的实用器件正瞄准量产。纳米器件的平面结构仍是制造技术的核心,这限制了器件进一步集成到芯片中。向三维空间扩展是未来一个有前景的策略;然而,三维纳米空间中的表面相互作用使得难以集成具有超高纵横比的纳米结构。在此,我们报告一种独特技术,利用高能带电粒子来制备具有超过100的高纵横比且数量密度可控的独立一维有机纳米结构。沿着粒子穿透各种可升华有机分子薄膜的直线路径,形成了厚度约为10至15纳米且长度可控的一维纳米线。开发了一种全干法工艺来分离纳米线,并在纳米线中构建平面或同轴异质结结构。对所开发的直立纳米线阵列的电学和结构功能进行了研究,证明了当前超薄有机纳米线系统的潜力。