Howard D J, Paine D C, Sacks R N
Division of Engineering, Brown University, Providence, Rhode Island 02912.
J Electron Microsc Tech. 1991 Jun;18(2):117-20. doi: 10.1002/jemt.1060180204.
We describe a method for plan-view transmission electron microscopy (TEM) sample preparation that takes advantage of extreme etch-rate selectivity in GaAs and AlAs in HF/H2O solutions. GaAs/InxGa1-xAs/GaAs strained-layer films (x = 0.05, 0.10, 0.19, 0.22) were chemically lifted off using this technique and were mounted on Cu TEM grids such that TEM transparent areas of up to 1 x 2 mm of constant thickness (196.4 nm) could be viewed. This simple, large-area plan-view technique uses only chemical methods and significantly extends the usefulness of TEM for the evaluation of crystal quality in GaAs-based epitaxial systems. The method requires the growth of a release layer of AlAs (10 nm thick) prior to the layered structure of interest.
我们描述了一种用于平面透射电子显微镜（TEM）样品制备的方法，该方法利用了HF/H₂O溶液中GaAs和AlAs极高的蚀刻速率选择性。使用该技术化学剥离了GaAs/InₓGa₁₋ₓAs/GaAs应变层薄膜（x = 0.05、0.10、0.19、0.22），并将其安装在铜TEM网格上，以便可以观察到厚度恒定（196.4 nm）、面积达1×2 mm的TEM透明区域。这种简单的大面积平面观察技术仅使用化学方法，显著扩展了TEM在评估基于GaAs的外延系统晶体质量方面的用途。该方法需要在感兴趣的层状结构之前生长一层10 nm厚的AlAs释放层。
