Rossi Enrico, Das Sarma S
Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, MD 20742, USA.
Phys Rev Lett. 2008 Oct 17;101(16):166803. doi: 10.1103/PhysRevLett.101.166803. Epub 2008 Oct 15.
We calculate the carrier-density-dependent ground-state properties of graphene in the presence of random charged impurities in the substrate taking into account disorder and interaction effects nonperturbatively on an equal footing in a self-consistent theoretical formalism. We provide detailed quantitative results on the dependence of the disorder-induced spatially inhomogeneous two-dimensional carrier density distribution on the external gate bias, the impurity density, and the impurity location. We find that the interplay between disorder and interaction is strong, particularly at lower impurity densities. We show that, for the currently available typical graphene samples, inhomogeneity dominates graphene physics at low (< or approximately 10(12) cm(-2)) carrier density with the density fluctuations becoming larger than the average density.
我们在自洽理论形式体系中，在同等基础上非微扰地考虑无序和相互作用效应，计算了衬底中存在随机带电杂质时石墨烯的与载流子密度相关的基态性质。我们给出了关于无序诱导的二维载流子密度空间非均匀分布对外加栅极偏压、杂质密度和杂质位置依赖性的详细定量结果。我们发现无序和相互作用之间的相互作用很强，特别是在较低的杂质密度下。我们表明，对于目前可用的典型石墨烯样品，在低（<或约10¹² cm⁻²）载流子密度下，非均匀性主导了石墨烯物理，密度涨落变得大于平均密度。
