Haugh M J, Schneider M B
National Security Technologies, P.O. Box 2710, Livermore, California 94550, USA.
Rev Sci Instrum. 2008 Oct;79(10):10E925. doi: 10.1063/1.2966457.
The static x-ray imager (SXI) is a diagnostic used at the National Ignition Facility (NIF) to measure the position of the x rays produced by lasers hitting a gold foil target. The intensity distribution taken by the SXI camera during a NIF shot is used to determine how accurately NIF can aim laser beams. This is critical to proper NIF operation. Imagers are located at the top and the bottom of the NIF target chamber. The charge coupled device (CCD) chip is an x-ray sensitive silicon sensor, with a large format array (2k x 2k), 24 microm square pixels, and 15 microm thick. A multianode Manson x-ray source, operating up to 10 kV and 10 W, was used to characterize and calibrate the imagers. The output beam is heavily filtered to narrow the spectral beam width, giving a typical resolution E/DeltaE approximately = 10. The x-ray beam intensity was measured using an x-ray photodiode that has an accuracy better than 1% up to the Si K edge and better than 5% at higher energies. The x-ray beam provides full CCD illumination and is flat, within +/-1% maximum to minimum. The spectral efficiency was measured at ten energy bands ranging from 930 to 8470 eV. We observed an energy dependent pixel sensitivity variation that showed continuous change over a large portion of the CCD. The maximum sensitivity variation occurred at 8470 eV. The geometric pattern did not change at lower energies, but the maximum contrast decreased and was not observable below 4 keV. We were also able to observe debris, damage, and surface defects on the CCD chip. The Manson source is a powerful tool for characterizing the imaging errors of an x-ray CCD imager. These errors are quite different from those found in a visible CCD imager.
静态X射线成像仪(SXI)是国家点火装置(NIF)使用的一种诊断设备,用于测量激光照射金箔靶产生的X射线的位置。在NIF射击过程中,SXI相机获取的强度分布用于确定NIF瞄准激光束的精确程度。这对NIF的正常运行至关重要。成像仪位于NIF靶室的顶部和底部。电荷耦合器件(CCD)芯片是一种对X射线敏感的硅传感器,具有大幅面阵列(2k×2k)、24微米见方的像素和15微米厚。使用一个工作电压高达10 kV、功率为10 W的多阳极曼森X射线源对成像仪进行特性描述和校准。输出光束经过大量滤波以缩小光谱光束宽度,给出典型分辨率E/ΔE约等于10。使用一个X射线光电二极管测量X射线束强度,该二极管在Si K边以下精度优于1%,在更高能量下精度优于5%。X射线束能对整个CCD进行均匀照射,且平整度在最大到最小的±1%范围内。在930至8470 eV的十个能带测量了光谱效率。我们观察到像素灵敏度随能量变化,在CCD的很大一部分区域呈现连续变化。最大灵敏度变化发生在8470 eV。在较低能量下几何图案不变,但最大对比度降低,在4 keV以下无法观察到。我们还能够观察到CCD芯片上的碎片、损伤和表面缺陷。曼森源是表征X射线CCD成像仪成像误差的有力工具。这些误差与可见CCD成像仪中的误差有很大不同。