Umar Ahmad, Rahman M M, Hahn Yoon-Bong
BK21 Centre for Future Energy Materials and Devices and Nanomaterials Processing Research Centre, School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju, South Korea.
Talanta. 2009 Feb 15;77(4):1376-80. doi: 10.1016/j.talanta.2008.09.020. Epub 2008 Sep 19.
High-aspect-ratio ZnO nanowires based ultra-sensitive hydrazine amperometric sensor has been fabricated which showed a high and reproducible sensitivity of 12.76 microAcm(-2)nM(-1), detection limit, based on S/N ratio, 84.7 nM, response time less than 5s, linear range from 500 to 1200 nM and correlation coefficient of R=0.9989. This is the first report in which such a very high-sensitivity and low detection limit has been achieved for the hydrazine sensors by using ZnO nanostructures modified electrodes. Therefore, this work opens a way to utilize simply grown ZnO nanostructures as an efficient electron mediator to fabricate efficient hydrazine sensors.
已制备出基于高纵横比氧化锌纳米线的超灵敏肼安培传感器,该传感器具有12.76微安·平方厘米⁻²·纳摩尔⁻¹的高且可重现的灵敏度,基于信噪比的检测限为84.7纳摩尔,响应时间小于5秒,线性范围为500至1200纳摩尔,相关系数R = 0.9989。这是首次通过使用氧化锌纳米结构修饰电极实现如此高灵敏度和低检测限的肼传感器的报道。因此,这项工作为利用简单生长的氧化锌纳米结构作为高效电子介质来制造高效肼传感器开辟了一条道路。