Bhuvana T, Gregoratti Luca, Heun Stefan, Dalmiglio Matteo, Kulkarni G U
Chemistry and Physics of Materials Unit and DST Unit on Nanoscience, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P O, Bangalore 560 064, India.
Langmuir. 2009 Jan 20;25(2):1259-64. doi: 10.1021/la803344f.
Electron resist behavior of Pd hexadecanethiolate is studied by varying the e-dosage from 2-280 muC.cm(-2). The e-beam exposed resist is characterized using energy dispersive spectroscopy, infrared spectroscopy, and X-ray photoelectron spectroscopy with nanometric lateral resolution. Electron beam exposure causes defects in the alkyl chain of the thiolate, giving the required solubility contrast during the developing step, thus qualifying the precursor as an e-beam resist. On exposure to the e-beam, the reduction of Pd(2+) to Pd(0) is observed, and the reduction increases with increasing e-dosage. The resist is highly sensitive, with the estimated sensitivity being 32 muC.cm(-2). Thermolysis at 250 degrees C leads to the formation of Pd nanoparticles, demonstrating the essential feature of a direct write resist for conducting patterns.
通过将电子剂量从2 - 280 μC·cm⁻² 变化，研究了十六烷硫醇钯的电子抗蚀剂行为。使用具有纳米级横向分辨率的能量色散光谱、红外光谱和X射线光电子能谱对电子束曝光的抗蚀剂进行表征。电子束曝光会在硫醇盐的烷基链中产生缺陷，在显影步骤中提供所需的溶解度对比度，从而使该前体符合电子束抗蚀剂的标准。在电子束曝光时，观察到Pd(2+) 还原为Pd(0)，并且还原程度随着电子剂量的增加而增加。该抗蚀剂具有高灵敏度，估计灵敏度为32 μC·cm⁻² 。在250℃下进行热解会导致形成钯纳米颗粒，这证明了用于导电图案的直写抗蚀剂的基本特征。
