Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064, India.
J Am Chem Soc. 2011 Aug 17;133(32):12706-13. doi: 10.1021/ja2039612. Epub 2011 Jul 26.
The study explores the possibility of using metal anions complexed with tetraoctylammonium bromide (ToABr) as single-source direct write precursors in e-beam and soft lithography processes to obtain micro- and nanoscale patterns of various metals, i.e., Au, Pd, Pt, Ag, Pb and Cu, as well as of their alloys (AuCu), oxides (Co(3)O(4), ZnO), nitrides (CoN, InN, GaN), and sulfides (Ag(2)S). The extraction efficiency of ToABr for different metal anions is found to be varied (40-90%), but the obtained precursors are easily processable as they have reasonable solubility in common solvents and are obtainable as smooth films, both being important for high-resolution patterning. The e-resist action of the precursors originates from the extreme e-beam sensitivity of the hydrocarbon chain present in ToABr, while direct micromolding has been possible due to easy flow of the precursor solutions in capillaries. The interaction of the anion and ToABr being mainly electrostatic enables easy removal of the hydrocarbon from patterned regions by thermolysis on a hot plate in the ambient or in controlled atmosphere to form the desired product. This method can be easily generalized.
本研究探索了使用金属阴离子与四辛基溴化铵（ToABr）形成的配合物作为单源直接写入前驱体，通过电子束和软光刻工艺获得各种金属（如 Au、Pd、Pt、Ag、Pb 和 Cu）及其合金（AuCu）、氧化物（Co(3)O(4)、ZnO）、氮化物（CoN、InN、GaN）和硫化物（Ag(2)S）的微纳图案的可能性。发现 ToABr 对不同金属阴离子的萃取效率有所不同（40-90%），但所得的前驱体易于处理，因为它们在常见溶剂中有合理的溶解度，并且可以形成光滑的薄膜，这对于高分辨率图案化都非常重要。前驱体的电子抗蚀作用源于 ToABr 中存在的烃链的极端电子束敏感性，而直接微成型是由于前驱体溶液在毛细管中易于流动而成为可能。阴离子和 ToABr 之间的相互作用主要是静电相互作用，因此可以通过在环境或控制气氛中的热板上进行热解，轻松地从图案化区域中去除烃，从而形成所需的产物。这种方法可以很容易地推广。
