Timm R, Eisele H, Lenz A, Ivanova L, Balakrishnan G, Huffaker D L, Dähne M
Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany.
Phys Rev Lett. 2008 Dec 19;101(25):256101. doi: 10.1103/PhysRevLett.101.256101. Epub 2008 Dec 16.
Ring-shaped GaSb/GaAs quantum dots, grown by molecular beam epitaxy, were studied using cross-sectional scanning tunneling microscopy. These quantum rings have an outer shape of a truncated pyramid with baselengths around 15 nm and heights of about 2 nm but are characterized by a clear central opening extending over about 40% of the outer baselength. They form spontaneously during the growth and subsequent continuous capping of GaSb/GaAs quantum dots due to the large strain and substantial As-for-Sb exchange reactions leading to strong Sb segregation.
利用横截面扫描隧道显微镜对通过分子束外延生长的环形锑化镓/砷化镓量子点进行了研究。这些量子环的外形为截顶棱锥，底边长度约为15纳米，高度约为2纳米，但其特征是有一个清晰的中心开口，其延伸范围超过外底边长度的约40%。由于大应变和大量的砷-锑交换反应导致强烈的锑偏析，它们在锑化镓/砷化镓量子点的生长及随后的连续覆盖过程中自发形成。
Zotero 插件