Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany.
Nano Lett. 2010 Oct 13;10(10):3972-7. doi: 10.1021/nl101831n.
Combined cross-sectional scanning tunneling microscopy and spectroscopy results reveal the interplay between the atomic structure of ring-shaped GaSb quantum dots in GaAs and the corresponding electronic properties. Hole confinement energies between 0.2 and 0.3 eV and a type-II conduction band offset of 0.1 eV are directly obtained from the data. Additionally, the hole occupancy of quantum dot states and spatially separated Coulomb-bound electron states are observed in the tunneling spectra.
结合横截面扫描隧道显微镜和光谱学结果揭示了 GaAs 中环形 GaSb 量子点的原子结构与相应电子性质之间的相互作用。从数据中直接得到了 0.2 到 0.3eV 的空穴限制能量和 0.1eV 的 II 型导带偏移量。此外，在隧道谱中观察到了量子点态和空间分离的库仑束缚电子态的空穴占据。
