He Haiyan Y, Huang Jianfeng F, Cao Liyun Y, Wu Jianpeng P
School of Materials Science and Engineering, Shaanxi University of Science and Technology, PR China.
Recent Pat Nanotechnol. 2009;3(1):73-6. doi: 10.2174/187221009787003267.
Fatigue-free Bi(3.2)Sm(0.8)Ti(3)O(12) ferroelectric thin films were prepared on p-Si(100) substrate using a sol-gel deposition process. The formation and orientation of thin films were studied upon annealing conditions with XRD and SEM. Experiment results indicate that after preannealing at 400 degrees C for 10 min, annealing at 700 degrees C resulted in formation of strong a-axis oriented films. The orientation degree, I(200)/I(117), remarkably increases from 1.033 to 1.76 and 6.49 with increasing annealing time from 3 to 10 and 15 min respectively. However, only (117)-oriented films were produced by annealing films at 900 degrees C for 3 min without the preannealing.
采用溶胶-凝胶沉积工艺在p-Si(100)衬底上制备了无疲劳的Bi(3.2)Sm(0.8)Ti(3)O(12)铁电薄膜。利用X射线衍射仪（XRD）和扫描电子显微镜（SEM）研究了退火条件对薄膜形成和取向的影响。实验结果表明，在400℃预退火10分钟后，700℃退火导致形成强a轴取向的薄膜。随着退火时间从3分钟增加到10分钟和15分钟，取向度I(200)/I(117)分别从1.033显著增加到1.76和6.49。然而，在没有预退火的情况下，在900℃退火3分钟只能制备出(117)取向的薄膜。
