Oh Sang Ho, Legros Marc, Kiener Daniel, Dehm Gerhard
Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, Jahnstr. 12, 8700 Leoben, Austria.
Nat Mater. 2009 Feb;8(2):95-100. doi: 10.1038/nmat2370. Epub 2009 Jan 18.
'Smaller is stronger' does not hold true only for nanocrystalline materials but also for single crystals. It is argued that this effect is caused by geometrical constraints on the nucleation and motion of dislocations in submicrometre-sized crystals. Here, we report the first in situ transmission electron microscopy tensile tests of a submicrometre aluminium single crystal that are capable of providing direct insight into source-controlled dislocation plasticity in a submicrometre crystal. Single-ended sources emit dislocations that escape the crystal before being able to multiply. As dislocation nucleation and loss rates are counterbalanced at about 0.2 events per second, the dislocation density remains statistically constant throughout the deformation at strain rates of about 10(-4) s(-1). However, a sudden increase in strain rate to 10(-3) s(-1) causes a noticeable surge in dislocation density as the nucleation rate outweighs the loss rate. This observation indicates that the deformation of submicrometre crystals is strain-rate sensitive.
“越小越强”这一观点不仅适用于纳米晶体材料,也适用于单晶。有人认为,这种效应是由亚微米尺寸晶体中位错形核和运动的几何约束引起的。在此,我们报告了首次对亚微米铝单晶进行的原位透射电子显微镜拉伸试验,该试验能够直接洞察亚微米晶体中源控制的位错塑性。单端源发射的位错在能够增殖之前就逃离了晶体。由于位错形核率和损失率在每秒约0.2次事件时达到平衡,在约10^(-4) s^(-1) 的应变速率下,整个变形过程中位错密度在统计上保持恒定。然而,应变速率突然增加到10^(-3) s^(-1) 时,由于形核率超过损失率,位错密度会显著激增。这一观察结果表明,亚微米晶体的变形对应变速率敏感。