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通过控制枝晶分支生长实现n型氧化亚铜电极的光电流增强。

Photocurrent enhancement of n-type Cu2O electrodes achieved by controlling dendritic branching growth.

作者信息

McShane Colleen M, Choi Kyoung-Shin

机构信息

Department of Chemistry, Purdue University, West Lafayette, Indiana 47907, USA.

出版信息

J Am Chem Soc. 2009 Feb 25;131(7):2561-9. doi: 10.1021/ja806370s.

Abstract

Cu(2)O electrodes composed of dendritic crystals were produced electrochemically using a slightly acidic medium (pH 4.9) containing acetate buffer. The buffer played a key role for stabilizing dendritic branching growth as a pH drop during the synthesis prevents formation of morphologically unstable branches and promotes faceted growth. Dendritic branching growth enabled facile coverage of the substrate with Cu(2)O while avoiding growth of a thicker Cu(2)O layer and increasing surface areas. The resulting electrodes showed n-type behavior by generating anodic photocurrent without applying an external bias (zero-bias photocurrent under short-circuit condition) in an Ar-purged 0.02 M K(2)SO(4) solution. The zero-bias photocurrent of crystalline dendritic electrodes was significantly higher than that of the electrodes containing micrometer-size faceted crystals deposited without buffer. In order to enhance photocurrent further a strategy of improving charge-transport properties by increasing dendritic crystal domain size was investigated. Systematic changes in nucleation density and size of the dendritic Cu(2)O crystals were achieved by altering the deposition potential, Cu(2+) concentration, and acetate concentration. Increasing dendritic crystal size consistently resulted in the improvement of photocurrent regardless of the method used to regulate crystal size. The electrode composed of dendritic crystals with the lateral dimension of ca. 12000 microm(2) showed more than 20 times higher zero-bias photocurrent than that composed of dendritic crystals with the lateral dimension of ca. 100 microm(2). The n-type nature of the Cu(2)O electrodes prepared by this study were confirmed by linear sweep voltammetry with chopped light and capacitance measurements (i.e., Mott-Schottky plots). The flatband potential in a 0.2 M K(2)SO(4) solution (pH 6) was estimated to be -0.78 vs Ag/AgCl reference electrode. The IPCE measured without applying an external bias was approximately 1% for the visible region. With appropriate doping studies and surface treatment to improve charge transport and interfacial kinetics more efficient n-type Cu(2)O electrodes will be prepared for use in various photoelectrochemical and photovoltaic devices.

摘要

使用含有醋酸盐缓冲液的微酸性介质(pH 4.9)通过电化学方法制备了由树枝状晶体组成的Cu₂O电极。该缓冲液在稳定树枝状分支生长方面起着关键作用,因为合成过程中的pH下降会阻止形态不稳定分支的形成并促进刻面生长。树枝状分支生长使得能够用Cu₂O轻松覆盖基底,同时避免形成更厚的Cu₂O层并增加表面积。在氩气吹扫的0.02 M K₂SO₄溶液中,所得电极通过在不施加外部偏压的情况下产生阳极光电流(短路条件下的零偏压光电流)表现出n型行为。晶体树枝状电极的零偏压光电流明显高于不含缓冲液沉积的微米级刻面晶体电极。为了进一步提高光电流,研究了通过增加树枝状晶体畴尺寸来改善电荷传输性能的策略。通过改变沉积电位、Cu²⁺浓度和醋酸盐浓度,实现了树枝状Cu₂O晶体成核密度和尺寸的系统变化。无论用于调节晶体尺寸的方法如何,增加树枝状晶体尺寸始终会导致光电流的提高。由横向尺寸约为12000 µm²的树枝状晶体组成的电极显示出的零偏压光电流比由横向尺寸约为100 µm²的树枝状晶体组成的电极高20倍以上。通过斩光线性扫描伏安法和电容测量(即莫特-肖特基图)证实了本研究制备的Cu₂O电极的n型性质。在0.2 M K₂SO₄溶液(pH 6)中,相对于Ag/AgCl参比电极,平带电位估计为-0.78。在不施加外部偏压的情况下测量的可见区域的IPCE约为1%。通过适当的掺杂研究和表面处理来改善电荷传输和界面动力学,将制备出更高效的n型Cu₂O电极用于各种光电化学和光伏器件。

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