Córdova Ricardo, López Cristina, Orellana Marco, Grez Paula, Schrebler Ricardo, Del Río Rodrigo
Instituto de Química, Pontificia Universidad Católica de Valparaíso, Casilla 4059, Valparaíso, Chile.
J Phys Chem B. 2005 Mar 3;109(8):3212-21. doi: 10.1021/jp047485o.
The electroformation of Cu-Se phases, obtained by selenizing a thin film of copper deposited on the quartz/gold electrode system, was studied with an electrochemical quartz crystal microbalance (EQCM) and by cyclic voltammetry (CV) in an alkaline solution (0.05 M Na(2)B(4)O(7)) containing selenide ion. Potentiodynamic parameters showed that the formation of the initial Cu-Se phases (Cu(2-x)Se/Cu(3)Se(2)) is ruled by an irreversible diffusion controlled mechanism, where a first electron transfer is the rate-determining step. A CV study was also performed with a bulk copper electrode in 1 M NaOH solution containing selenide ion. The deconvolution of the anodic and cathodic I/E profiles corresponding to the electroformation and electroreduction of the Cu-Se film formed allowed us to establish that, depending on the anodic potential limit of the potentiodynamic scan, the Cu-Se phases formed were either a mixture of Cu(2)(-x)Se/Cu(3)Se(2) or Cu(2-x)Se/Cu(3)Se(2)/CuSe. An EQCM study showed that, during the initial stage of Cu-Se phase electroformation, water molecules were released from the electrode. In advanced stages of the process, when the electrode was completely covered by Cu-Se compounds, selenide anions were adsorbed on the formed phase. When the anodic potential limit was extended to -0.2 V, copper oxide compounds were formed. The analysis of the cathodic charge related to Cu-Se phase electroreduction and Energy Dispersive X-ray Spectroscopy (EDXS) analysis confirmed that when the anodic limit was -0.8 V, a mixture of different Cu-Se phases was formed. A I/t transient study performed with a bulk copper electrode in alkaline solution containing selenide established that the nucleation and growth mechanism (NGM) of the Cu-Se phases takes place through an initial bidimensional-instantaneous nucleation (IN2D), followed by four bidimensional-progressive nucleations (PN2D). These results and atomic force microscopy (AFM) experiences supported that the growth of the Cu-Se films occurs through a layer-by-layer mechanism.
通过对沉积在石英/金电极系统上的铜薄膜进行硒化处理来制备铜 - 硒相的电形成过程,采用电化学石英晶体微天平(EQCM)并通过循环伏安法(CV)在含有硒离子的碱性溶液(0.05 M Na₂B₄O₇)中进行了研究。动电位参数表明,初始铜 - 硒相(Cu₂₋ₓSe/Cu₃Se₂)的形成受不可逆扩散控制机制支配,其中第一次电子转移是速率决定步骤。还使用块状铜电极在含有硒离子的1 M NaOH溶液中进行了CV研究。对与形成的铜 - 硒膜的电形成和电还原相对应的阳极和阴极I/E曲线进行去卷积,使我们能够确定,根据动电位扫描的阳极电位极限,形成的铜 - 硒相要么是Cu₂₋ₓSe/Cu₃Se₂的混合物,要么是Cu₂₋ₓSe/Cu₃Se₂/CuSe。EQCM研究表明,在铜 - 硒相电形成的初始阶段,水分子从电极中释放出来。在该过程的后期阶段,当电极完全被铜 - 硒化合物覆盖时,硒阴离子吸附在形成的相上。当阳极电位极限扩展到 -0.2 V时,形成了氧化铜化合物。与铜 - 硒相电还原相关的阴极电荷分析和能量色散X射线光谱(EDXS)分析证实,当阳极极限为 -0.8 V时,形成了不同铜 - 硒相的混合物。使用块状铜电极在含有硒的碱性溶液中进行的I/t瞬态研究确定,铜 - 硒相的成核和生长机制(NGM)通过初始的二维瞬时成核(IN2D)发生,随后是四个二维渐进成核(PN2D)。这些结果和原子力显微镜(AFM)实验支持铜 - 硒膜的生长通过逐层机制进行。