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热蒸发过程中不同形貌的纳米晶CdSe薄膜。

Nanocrystalline CdSe thin films of different morphologies in thermal evaporation process.

作者信息

Pal U, Zaldivar M Herrera, Sathyamoorthy R, Manjuladevi V, Sudhagar P, Mohan S Chandra, Senthilarasu S

机构信息

Instituto de Física, Universidad Autónoma de Puebla, Apdo. Postal J-48, Puebla, Pue. 72570, Mexico.

出版信息

J Nanosci Nanotechnol. 2008 Dec;8(12):6474-80.

Abstract

Cadmium selenide nanocrystalline thin films of quasi-spherical morphology are prepared by evaporating CdSe nanopowders on glass substrates. Slightly oval shaped CdSe particles of about 165 nm average size (in 2-D) could be assembled over glass substrates by controlling the film thickness. Morphologies like assembly of particles, interconnected particles with mosaic-like structures and thin films of smooth surfaces could be prepared simply by controlling film thickness. A mechanism for such morphological variations is proposed. Observed variation of band gap energy in the films is explained in terms of quantum confinement effect and substrate-film interface strain.

摘要

通过在玻璃基板上蒸发硒化镉纳米粉末来制备准球形形态的硒化镉纳米晶薄膜。通过控制薄膜厚度,可以在玻璃基板上组装平均尺寸约为165nm(二维)的略呈椭圆形的硒化镉颗粒。仅通过控制薄膜厚度,就可以制备出颗粒组装、具有镶嵌状结构的相互连接颗粒以及表面光滑的薄膜等形态。提出了这种形态变化的机制。根据量子限制效应和基板-薄膜界面应变来解释薄膜中观察到的带隙能量变化。

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