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氮化硼纳米管中自陷激子的光致发光

Photoluminescence of self-trapped excitons in boron nitride nanotubes.

作者信息

Williams R T, Ucer K B, Carroll D L, Berzina B, Trinkler L, Korsak V, Krutohvostov R

机构信息

Department of Physics and Center for Nanotechnology and Molecular Materials, Wake Forest University, Winston-Salem, NC 27109, USA.

出版信息

J Nanosci Nanotechnol. 2008 Dec;8(12):6504-8.

PMID:19205230
Abstract

The excitation energy dependence and temperature dependence of photoluminescence from boron nitride nanotubes and hexagonal BN powder samples are reported. The results are discussed within a model attributing the broad 3.2 eV luminescence from these samples to self-trapped excitons in the low-dimensional structures of BN nanotubes and of nano-arch surface reconstructions on h-BN sheet edge faces in powder. An empirical model accounting for the unusual combination of excitation and temperature dependence of photoluminescence seen in these measurements is suggested. For the model to be consistent with the hypothesis of self-trapped excitons on BN nanotubes, it may be necessary to show that the cores of multiwall nanotubes are selectively probed by light tuned below the h-BN exciton.

摘要

报道了氮化硼纳米管和六方氮化硼粉末样品光致发光的激发能量依赖性和温度依赖性。在一个模型中对结果进行了讨论,该模型将这些样品中宽泛的3.2 eV发光归因于氮化硼纳米管低维结构以及粉末状六方氮化硼片边缘面的纳米拱形表面重构中的自陷激子。提出了一个经验模型,用于解释这些测量中所观察到的光致发光激发和温度依赖性的异常组合。为使该模型与氮化硼纳米管上自陷激子的假设相一致,可能有必要证明通过调谐到低于六方氮化硼激子的光可选择性地探测多壁纳米管的核心。

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