化学合成的铟掺杂氧化锌纳米结构的低温光致发光特性

Low temperature photoluminescence characteristics of chemically synthesized indium doped zinc oxide nanostructures.

作者信息

Escobedo Morales A, Aceves R, Pal U, Zhang J Z

机构信息

Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apdo. Postal J-48, CP 72570, Puebla, Pue., México.

出版信息

J Nanosci Nanotechnol. 2008 Dec;8(12):6538-44.

PMID:19205237

Abstract

Photoluminescence (PL) emission and excitation (EPL) spectra of un-doped and indium (1%) doped 1D zinc oxide nanostructures are studied at different temperatures. The nanostructures reveal a blue emission band attributed to localized donor states. Indium doping enhances the blue emission. While at low temperatures (< 50 K) PL spectra are dominated by the emission attributed to the recombination of excitons bound to neutral donors (D(0),X), at higher temperatures (>100 K), defect related emissions in the visible range dominate over the excitonic emission. Temperature dependence measurements on the doped sample reveal that (D(0),X) emission energies obey the Varshni's formula with fitting constants alpha = 8.4 +/- 0.3 x 10(-4) eV/K and beta = 650 +/- 40 K. The (D(0),X) emission intensity decays exponentially with temperature.

摘要

在不同温度下研究了未掺杂和铟（1%）掺杂的一维氧化锌纳米结构的光致发光（PL）发射光谱和激发（EPL）光谱。这些纳米结构显示出一个归因于局域施主态的蓝色发射带。铟掺杂增强了蓝色发射。在低温（<50 K）时，PL光谱主要由与中性施主（D(0)，X）结合的激子复合所产生的发射主导，而在较高温度（>100 K）时，可见光范围内与缺陷相关的发射超过了激子发射。对掺杂样品的温度依赖性测量表明，（D(0)，X）发射能量符合Varshni公式，拟合常数α = 8.4 +/- 0.3 x 10(-4) eV/K，β = 650 +/- 40 K。（D(0)，X）发射强度随温度呈指数衰减。