Im Sung Gap, Kusters David, Choi Wonjae, Baxamusa Salmaan H, van de Sanden M C M, Gleason Karen K
Department of Chemical Engineering and Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
ACS Nano. 2008 Sep 23;2(9):1959-67. doi: 10.1021/nn800380e.
Novel nanoporous poly(3,4-ethylenedioxythiophene) (PEDOT) films with basalt-like surface morphology are successfully obtained via a one-step, vapor phase process of oxidative chemical vapor deposition (oCVD) by introducing a new oxidant, CuCl(2). The substrate temperature of the oCVD process is a crucial process parameter for controlling electrical conductivity and conjugation length. Moreover, the surface morphology is also systemically tunable through variations in substrate temperature, a unique advantage of the oCVD process. By increasing the substrate temperature, the surface morphology becomes more porous, with the textured structure on the nanometer scale. The size of nanopores and fibrils appears uniformly over 25 mm x 25 mm areas on the Si wafer substrates. Conformal coverage of PEDOT films grown with the CuCl(2) oxidant (C-PEDOT) is observed on both standard trench structures with high aspect ratio and fragile surfaces with complex topology, such as paper, results which are extremely difficult to achieve with liquid phase based processes. The tunable nanoporosity and its conformal coverage on various complex geometries are highly desirable for many device applications requiring controlled, high interfacial area, such as supercapacitors, Li ion battery electrodes, and sensors. For example, a highly hydrophilic surface with the static water contact angle down to less than 10 degrees is obtained solely by changing surface morphology. By applying fluorinated polymer film onto the nanoporous C-PEDOT via initiative chemical vapor deposition (iCVD), the C-PEDOT surface also shows the contact angle higher than 150 degrees . The hierarchical porous structure of fluorinated polymer coated C-PEDOT on a paper mat shows superhydrophobicity and oil repellency.
通过引入新的氧化剂氯化铜(CuCl₂),采用氧化化学气相沉积(oCVD)的一步气相法成功制备出具有类似玄武岩表面形态的新型纳米多孔聚(3,4-乙撑二氧噻吩)(PEDOT)薄膜。oCVD过程的衬底温度是控制电导率和共轭长度的关键工艺参数。此外,通过改变衬底温度,表面形态也可系统地调节,这是oCVD工艺的独特优势。随着衬底温度的升高,表面形态变得更加多孔,呈现出纳米级的纹理结构。在硅片衬底上25毫米×25毫米的区域内,纳米孔和纤维的尺寸均匀分布。在用CuCl₂氧化剂(C-PEDOT)生长的PEDOT薄膜中,在具有高纵横比的标准沟槽结构和具有复杂拓扑结构的易碎表面(如纸张)上均观察到了共形覆盖,这是基于液相工艺极难实现的结果。对于许多需要可控、高界面面积的器件应用(如超级电容器、锂离子电池电极和传感器)而言,可调谐的纳米孔隙率及其在各种复杂几何形状上的共形覆盖是非常理想的。例如,仅通过改变表面形态就能获得静态水接触角低至10度以下的高亲水性表面。通过主动化学气相沉积(iCVD)在纳米多孔C-PEDOT上涂覆氟化聚合物薄膜后,C-PEDOT表面的接触角也高于150度。纸垫上氟化聚合物涂层的C-PEDOT的分级多孔结构表现出超疏水性和拒油性。