Jung Hye Seong, Hong Young Joon, Li Yirui, Cho Jeonghui, Kim Yong-Jin, Yi Gyu-Chul
National CRI Center for Semiconductor Nanorods, Department of Materials Science and Engineering and School of Environmental Science and Engineering, POSTECH, Pohang, Gyeongbuk 790-784, Korea.
ACS Nano. 2008 Apr;2(4):637-42. doi: 10.1021/nn700320y.
The photocatalytic activity of GaN nanowires was investigated for the use of GaN nanowires as photocatalysts in harsh environments. GaN nanowires with diameters of 20-50 nm and lengths of 4-6 microm were prepared by Ni catalyst-assisted metal-organic chemical vapor deposition. Comparisons of GaN nanowires with GaN submicron dot arrays and thin films showed that GaN nanowires exhibit much better photocatalytic activity, resulting from a high surface-to-volume ratio. In addition, GaN nanowires exhibited good ability to photodegrade organic dye at various pHs, even under strong acidity and alkalinity. The photocatalytic activity of GaN nanowires was also compared with that of ZnO and TiO(2) nanowires.
研究了氮化镓纳米线在恶劣环境中作为光催化剂的光催化活性。通过镍催化剂辅助的金属有机化学气相沉积法制备了直径为20 - 50纳米、长度为4 - 6微米的氮化镓纳米线。氮化镓纳米线与氮化镓亚微米点阵列和薄膜的比较表明，由于高的表面积与体积比，氮化镓纳米线表现出更好的光催化活性。此外，氮化镓纳米线在各种pH值下，甚至在强酸性和强碱性条件下，都表现出良好的光降解有机染料的能力。还将氮化镓纳米线的光催化活性与氧化锌和二氧化钛纳米线的光催化活性进行了比较。
