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氮化镓纳米棒网络中的负电容和体光伏现象。

Negative-capacitance and bulk photovoltaic phenomena in gallium nitride nanorods network.

作者信息

Thakre Atul, Kushvaha Sunil Singh, Kumar M Senthil, Kumar Ashok

机构信息

Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory Campus Dr. K. S. Krishnan Marg New Delhi 110012 India

CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg New Delhi 110012 India.

出版信息

RSC Adv. 2018 Sep 21;8(57):32794-32798. doi: 10.1039/c8ra06101g. eCollection 2018 Sep 18.

DOI:10.1039/c8ra06101g
PMID:35547666
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9086369/
Abstract

An enhanced self-powered near-ultraviolet photodetection phenomenon was observed in epitaxial gallium nitride (GaN) nanorods network grown on an intermediate layer of N:GaN on a nitridated HfO(N:HfO)/SiO/p-Si substrate. The fabricated Au/GaN/N:GaN/N:HfO/Ag heterostructure exhibited a giant change (OFF/ON ratio > 50 without applying any external electrical field) in its conductance when illuminated by a very weak (25 mW cm) near-UV monochromatic light with a low dark current (nearly 20 nA). The presented near-UV photodetector offers photoresponsivity of ∼2.4 mA W at an applied voltage of 1 V. We observed an optically generated internal open circuit voltage of ∼155 mV and short circuit current ∼430 nA, which can be attributed to the quantum confinement of free charge carriers in the nanorod matrix. Interestingly, it also shows a negative capacitance after near-UV illumination. It has great potential as a self-powered UV photodetector and in metamaterial applications.

摘要

在氮化的HfO(N:HfO)/SiO/p-Si衬底上的N:GaN中间层上生长的外延氮化镓(GaN)纳米棒网络中观察到一种增强的自供电近紫外光探测现象。制备的Au/GaN/N:GaN/N:HfO/Ag异质结构在被非常弱的(25 mW cm)近紫外单色光照射时，其电导发生了巨大变化(在不施加任何外部电场的情况下，开/关比>50)，且暗电流很低(接近20 nA)。所展示的近紫外光探测器在1 V的施加电压下提供约2.4 mA W的光响应率。我们观察到光生内部开路电压约为155 mV，短路电流约为430 nA，这可归因于纳米棒矩阵中自由电荷载流子的量子限制。有趣的是，在近紫外光照后它还表现出负电容。它作为自供电紫外光探测器和超材料应用具有巨大潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6fb/9086369/e44cc2651fe1/c8ra06101g-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6fb/9086369/31dc3a76908f/c8ra06101g-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6fb/9086369/416bb61d3715/c8ra06101g-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6fb/9086369/b50f3084c80b/c8ra06101g-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6fb/9086369/2abc7bce27ad/c8ra06101g-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6fb/9086369/e44cc2651fe1/c8ra06101g-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6fb/9086369/31dc3a76908f/c8ra06101g-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6fb/9086369/416bb61d3715/c8ra06101g-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6fb/9086369/b50f3084c80b/c8ra06101g-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6fb/9086369/2abc7bce27ad/c8ra06101g-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f6fb/9086369/e44cc2651fe1/c8ra06101g-f5.jpg

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本文引用的文献

1
A Review on Organic-Inorganic Halide Perovskite Photodetectors: Device Engineering and Fundamental Physics.有机-无机卤化物钙钛矿光电探测器综述：器件工程与基础物理。
Adv Mater. 2017 Nov;29(41). doi: 10.1002/adma.201605242. Epub 2017 Sep 14.
2
Novel UV-Visible Photodetector in Photovoltaic Mode with Fast Response and Ultrahigh Photosensitivity Employing Se/TiO Nanotubes Heterojunction.基于硒/二氧化钛纳米管异质结的光伏模式下具有快速响应和超高灵敏度的新型紫外可见光探测器。
Small. 2017 Feb;13(5). doi: 10.1002/smll.201602448. Epub 2016 Nov 17.
3
Photovoltaics with Ferroelectrics: Current Status and Beyond.
铁电光伏：现状与展望。
Adv Mater. 2016 Jul;28(26):5153-68. doi: 10.1002/adma.201505215. Epub 2016 May 2.
4
Surface Plasmon-Enhanced Photodetection in Few Layer MoS2 Phototransistors with Au Nanostructure Arrays.基于金纳米结构阵列的少层 MoS2 光电晶体管中的表面等离激元增强光电探测
Small. 2015 May;11(20):2392-8. doi: 10.1002/smll.201403422. Epub 2015 Jan 28.
5
High-performance flexible ultraviolet photoconductors based on solution-processed ultrathin ZnO/Au nanoparticle composite films.基于溶液处理的超薄ZnO/Au纳米颗粒复合薄膜的高性能柔性紫外光电导体。
Sci Rep. 2014 Mar 4;4:4268. doi: 10.1038/srep04268.
6
Synthesis of p-type GaN nanowires.p 型 GaN 纳米线的合成。
Nanoscale. 2013 Sep 21;5(18):8550-4. doi: 10.1039/c3nr01664a.
7
Nucleation control for the growth of vertically aligned GaN nanowires.垂直排列的氮化镓纳米线生长的成核控制。
Nanoscale Res Lett. 2012 Jul 7;7(1):373. doi: 10.1186/1556-276X-7-373.
8
A comprehensive review of one-dimensional metal-oxide nanostructure photodetectors.一维金属氧化物纳米结构光电探测器的综合评述。
Sensors (Basel). 2009;9(8):6504-29. doi: 10.3390/s90806504. Epub 2009 Aug 20.
9
Realization of a high-performance GaN UV detector by nanoplasmonic enhancement.通过纳米等离子体增强实现高性能氮化镓紫外探测器
Adv Mater. 2012 Feb 7;24(6):845-9. doi: 10.1002/adma.201102585. Epub 2012 Jan 2.
10
Metal-insulator-semiconductor photodetectors.金属-绝缘体-半导体光电探测器。
Sensors (Basel). 2010;10(10):8797-826. doi: 10.3390/s101008797. Epub 2010 Sep 28.