Miyake Chikahiro, Amako Katsumi, Shiraishi Naomasa, Sugimoto Toshio
Department of Biological and Environmental Science, Graduate School of Agricultural Science, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan.
Plant Cell Physiol. 2009 Apr;50(4):730-43. doi: 10.1093/pcp/pcp032. Epub 2009 Feb 27.
Responses of the reduction-oxidation level of plastoquinone (PQ) in the photosynthetic electron transport (PET) system of chloroplasts to growth light intensity were evaluated in tobacco plants. Plants grown in low light (150 micromol photons m-2 s-1) (LL plants) were exposed to a high light intensity (1,100 micromol photons m-2 s-1) for 1 d. Subsequently, the plants exposed to high light (LH plants) were returned back again to the low light condition: these plants were designated as LHL plants. Both LH and LHL plants showed higher values of non-photochemical quenching of Chl fluorescence (NPQ) and the fraction of open PSII centers (qL), and lower values of the maximum quantum yield of PSII in the dark (Fv/Fm), compared with LL plants. The dependence of qL on the quantum yield of PSII [Phi(PSII)] in LH and LHL plants was higher than that in LL plants. To evaluate the effect of an increase in NPQ and decrease in Fv/Fm on qL, we derived an equation expressing qL in relation to both NPQ and Fv/Fm, according to the lake model of photoexcitation of the PSII reaction center. As a result, the heat dissipation process, shown as NPQ, did not contribute greatly to the increase in qL. On the other hand, decreased Fv/Fm did contribute to the increase in qL, i.e. the enhanced oxidation of PQ under photosynthesis-limited conditions. Thylakoid membranes isolated from LH plants, having high qL, showed a higher tolerance against photoinhibition of PSII, compared with those from LL plants. We propose a 'plastoquinone oxidation system (POS)', which keeps PQ in an oxidized state by suppressing the accumulation of electrons in the PET system in such a way as to regulate the maximum quantum yield of PSII.
在烟草植株中评估了叶绿体光合电子传递(PET)系统中质体醌(PQ)还原-氧化水平对生长光强的响应。在弱光(150微摩尔光子·平方米⁻²·秒⁻¹)下生长的植株(LL植株)暴露于高光强(1100微摩尔光子·平方米⁻²·秒⁻¹)下1天。随后,暴露于高光下的植株(LH植株)再次回到弱光条件下:这些植株被指定为LHL植株。与LL植株相比,LH和LHL植株均表现出较高的叶绿素荧光非光化学猝灭(NPQ)值和开放PSII中心比例(qL),以及较低的PSII暗态最大量子产率(Fv/Fm)值。LH和LHL植株中qL对PSII量子产率[Phi(PSII)]的依赖性高于LL植株。为了评估NPQ增加和Fv/Fm降低对qL的影响,我们根据PSII反应中心光激发的湖泊模型推导了一个表达qL与NPQ和Fv/Fm关系的方程。结果表明,以NPQ表示的热耗散过程对qL的增加贡献不大。另一方面,Fv/Fm降低确实有助于qL的增加,即在光合作用受限条件下PQ氧化增强。与来自LL植株的类囊体膜相比,从具有高qL的LH植株分离出的类囊体膜对PSII光抑制表现出更高的耐受性。我们提出了一种“质体醌氧化系统(POS)”,它通过抑制PET系统中电子的积累,使PQ保持氧化状态,从而调节PSII的最大量子产率。