Chen Xiaonan, Chen Yun-Sheng, Zhao Yang, Jiang Wei, Chen Ray T
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758, USA.
Opt Lett. 2009 Mar 1;34(5):602-4. doi: 10.1364/ol.34.000602.
A high-speed compact silicon modulator based on the lateral capacitor configuration is experimentally demonstrated with low-power consumption and 3 dB modulation depth. The capacitor layout is introduced to scale down the total modulator capacitance to 30x10(-15) F, which effectively reduces the rf power consumption to 0.54 pJ/bit. Exploiting the slow group velocity of light in the slot photonic crystal waveguides, the device reported herein exhibits higher modulation efficiency than conventional capacitor modulator and provides a V(pi)L figure of merit of 0.18 Vcm at the wavelength of 1548 nm.
基于横向电容器配置的高速紧凑型硅调制器通过实验得到了验证，该调制器具有低功耗和3 dB的调制深度。引入电容器布局可将整个调制器的电容缩小至30×10⁻¹⁵ F，从而有效地将射频功耗降低至0.54 pJ/bit。利用狭缝光子晶体波导中光的慢群速度，本文报道的器件展现出比传统电容器调制器更高的调制效率，并在1548 nm波长下提供了0.18 V·cm的VπL品质因数。
