超紧凑、低射频功率、10 Gb/s硅马赫-曾德尔调制器。

Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator.

作者信息

Green William M, Rooks Michael J, Sekaric Lidija, Vlasov Yurii A

出版信息

Opt Express. 2007 Dec 10;15(25):17106-13. doi: 10.1364/oe.15.017106.

DOI:10.1364/oe.15.017106

PMID:19551003

Abstract

Silicon p(+)-i-n(+) diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 mum are presented. These devices exhibit high modulation efficiency, with a V(pi)L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.

摘要

本文介绍了长度超紧凑，仅为100至200微米的硅p(+)-i-n(+)二极管马赫-曾德尔电光调制器。这些器件具有高调制效率，其V(π)L品质因数为0.36 V·毫米。在高达10 Gb/s的数据速率下实现了光调制，且射频功耗低，仅为5 pJ/比特。