Lamour Emily, Prigent Christophe, Eberhardt Benjamin, Rozet Jean Pierre, Vernhet Dominique
Université Pierre et Marie Curie-Paris 6, UMR 7588, INSP, 140 rue de Lourmel, Paris F-75015, France.
Rev Sci Instrum. 2009 Feb;80(2):023103. doi: 10.1063/1.3077284.
Although reliable models may predict the detection efficiency of semiconductor detectors, measurements are needed to check the parameters supplied by the manufacturers, namely, the thicknesses of dead layer, beryllium window, and crystal active area. The efficiency of three silicon detectors has been precisely investigated in their entire photon energy range of detection. In the zero to a few keV range, we developed a new method based on the detection of the 2E1 decay of the metastable Ar(17+) 2s-->1s transition. Very good theoretical knowledge of the energetic distribution of the 2E1 decay mode enables precise characterization of the absorbing layers in front of the detectors. In the high-energy range (>10 keV), the detector crystal thickness plays a major role in the detection efficiency and has been determined using a (241)Am source.
尽管可靠的模型可以预测半导体探测器的探测效率，但仍需要进行测量以检查制造商提供的参数，即死层、铍窗和晶体有效面积的厚度。已经在三种硅探测器的整个光子能量探测范围内精确研究了它们的效率。在零至几keV的能量范围内，我们基于对亚稳Ar(17+) 2s-->1s跃迁的2E1衰变的探测开发了一种新方法。对2E1衰变模式能量分布的非常好的理论知识使得能够精确表征探测器前方的吸收层。在高能范围（>10 keV），探测器晶体厚度在探测效率中起主要作用，并已使用(241)Am源进行了测定。
