Hew W K, Thomas K J, Pepper M, Farrer I, Anderson D, Jones G A C, Ritchie D A
Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom.
Phys Rev Lett. 2009 Feb 6;102(5):056804. doi: 10.1103/PhysRevLett.102.056804. Epub 2009 Feb 5.
We study the low-temperature transport properties of 1D quantum wires as the confinement strength V_{conf} and the carrier density n_{1D} are varied using a combination of split gates and a top gate in GaAs/AlGaAs heterostructures. At intermediate V_{conf} and n_{1D}, we observe a jump in conductance to 4e;{2}/h, suggesting a double wire. On further reducing n_{1D}, plateau at 2e;{2}/h returns. Our results show beginnings of the formation of an electron lattice in an interacting quasi-1D quantum wire. In the presence of an in-plane magnetic field, mixing of spin-aligned levels of the two wires gives rise to more complex states.
我们利用分裂栅极和顶栅极相结合的方法,在GaAs/AlGaAs异质结构中,研究了一维量子线在限制强度Vconf和载流子密度n1D变化时的低温输运特性。在中等Vconf和n1D时,我们观察到电导跃升至4e²/h,表明存在双线结构。进一步降低n1D时,2e²/h的平台又重新出现。我们的结果显示了在相互作用的准一维量子线中电子晶格形成的开端。在存在面内磁场的情况下,两条线的自旋对齐能级混合会产生更复杂的状态。