Kumar S, Pepper M
Department of Electronic and Electrical Engineering, UCL, Torrington Place, London WC1E 7JE, United Kingdom and London Centre for Nanotechnology, 17-19 Gordon Street, London WC1H 0AH, United Kingdom.
Appl Phys Lett. 2021 Sep 13;119(11):110502. doi: 10.1063/5.0061921. Epub 2021 Sep 15.
In this Perspective article, we present recent developments on interaction effects on the carrier transport properties of one-dimensional (1D) semiconductor quantum wires fabricated using the GaAs/AlGaAs system, particularly the emergence of the long predicted fractional quantization of conductance in the absence of a magnetic field. Over three decades ago, it was shown that transport through a 1D system leads to integer quantized conductance given by N·2e/h, where N is the number of allowed energy levels (N = 1, 2, 3, …). Recent experiments have shown that a weaker confinement potential and low carrier concentration provide a testbed for electrons strongly interacting. The consequence leads to a reconfiguration of the electron distribution into a zigzag assembly which, unexpectedly, was found to exhibit quantization of conductance predominantly at 1/6, 2/5, 1/4, and 1/2 in units of e/h. These fractional states may appear similar to the fractional states seen in the Fractional Quantum Hall Effect; however, the system does not possess a filling factor and they differ in the nature of their physical causes. The states may have promise for the emergent topological quantum computing schemes as they are controllable by gate voltages with a distinct identity.
在这篇观点文章中,我们介绍了使用砷化镓/铝镓砷系统制造的一维(1D)半导体量子线中,相互作用对载流子输运性质影响的最新进展,特别是在没有磁场的情况下长期预测的分数电导量子化的出现。三十多年前,研究表明通过一维系统的输运会导致由N·2e/h给出的整数量子化电导,其中N是允许的能级数量(N = 1、2、3、…)。最近的实验表明,较弱的限制势和低载流子浓度为强相互作用的电子提供了一个试验平台。其结果是导致电子分布重新配置成锯齿状排列,出乎意料的是,发现这种排列以e/h为单位主要在1/6、2/5、1/4和1/2处表现出电导量子化。这些分数态可能看起来与分数量子霍尔效应中看到的分数态相似;然而,该系统不具有填充因子,并且它们在物理成因的性质上有所不同。这些态对于新兴的拓扑量子计算方案可能具有前景,因为它们可以通过具有独特标识的栅极电压进行控制。