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压力诱导EuX(X = Te、Se、S、O)磁性半导体中的电子混合与铁磁有序增强

Pressure-induced electronic mixing and enhancement of ferromagnetic ordering in EuX (X=Te, Se, S, O) magnetic semiconductors.

作者信息

Souza-Neto Narcizo M, Haskel Daniel, Tseng Yuan-Chieh, Lapertot Gerard

机构信息

Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA.

出版信息

Phys Rev Lett. 2009 Feb 6;102(5):057206. doi: 10.1103/PhysRevLett.102.057206.

Abstract

The pressure- and anion-dependent electronic structure of EuX (X=Te, Se, S, O) monochalcogenides is probed with element- and orbital-specific x-ray absorption spectroscopy in a diamond anvil cell. An isotropic lattice contraction enhances the ferromagnetic ordering temperature by inducing mixing of Eu 4f and 5d electronic orbitals. Anion substitution (Te-->O) enhances competing exchange pathways through spin-polarized anion p states, counteracting the effect of the concomitant lattice contraction. The results have strong implications for efforts aimed at enhancing FM exchange interactions in thin films through interfacial strain or chemical substitutions.

摘要

利用金刚石对顶砧盒中的元素和轨道特异性X射线吸收光谱,对EuX(X = Te、Se、S、O)单硫属化物的压力和阴离子依赖电子结构进行了探测。各向同性晶格收缩通过诱导Eu 4f和5d电子轨道的混合来提高铁磁有序温度。阴离子取代(Te→O)通过自旋极化阴离子p态增强了竞争交换途径,抵消了伴随的晶格收缩的影响。这些结果对于旨在通过界面应变或化学取代增强薄膜中铁磁交换相互作用的研究具有重要意义。

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