Pothiraja Ramasamy, Milanov Andrian P, Barreca Davide, Gasparotto Alberto, Becker Hans-Werner, Winter Manuela, Fischer Roland A, Devi Anjana
Lehrstuhl für Anorganische Chemie II, Inorganic Materials Chemistry Group, Ruhr-University Bochum, D-44780, Bochum, Germany.
Chem Commun (Camb). 2009 Apr 21(15):1978-80. doi: 10.1039/b821128k. Epub 2009 Feb 25.
Novel volatile compounds of hafnium, namely tetrakis-N,O-dialkylcarbamato hafnium(iv) [Hf((i)PrNC(O)O(i)Pr)(4)] () and tetrakis-N,N,N'-trialkylureato hafnium(iv) [Hf((i)PrNC(O)N-(Me)Et)(4)] (), have been synthesized through the simple insertion reaction of isopropyl isocyanate into hafnium isopropoxide and hafnium ethylmethylamide, respectively; based on the promising thermal properties, compound has been evaluated as a precursor for metalorganic chemical vapor deposition (MOCVD) of HfO(2) thin films, which resulted in the growth of stoichiometric and crystalline layers with a uniform morphology at temperature as low as 250 degrees C.
新型铪挥发性化合物，即四-N,O-二烷基氨基甲酰氧基铪(IV) [Hf((i)PrNC(O)O(i)Pr)(4)] () 和四-N,N,N'-三烷基脲基铪(IV) [Hf((i)PrNC(O)N-(Me)Et)(4)] ()，已分别通过异丙基异氰酸酯与异丙醇铪和乙基甲基铪酰胺的简单插入反应合成；基于其良好的热性能，化合物已被评估为用于HfO(2)薄膜的金属有机化学气相沉积(MOCVD)的前驱体，这导致在低至250摄氏度的温度下生长出具有均匀形态的化学计量和结晶层。
