Xie F Q, Maul R, Augenstein A, Obermair C, Starikov E B, Schön G, Schimmel T, Wenzel W
Institut für Angewandte Physik, DFG-Center for Functional Nanostructures, Universität Karlsruhe, 76128 Karlsruhe, Germany.
Nano Lett. 2008 Dec;8(12):4493-7. doi: 10.1021/nl802438c.
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here, we explain the operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable, self-stabilizing reconstruction of the electrode contacts at the atomic level: While the device is manufactured by electrochemical deposition, it operates entirely on the basis of mechanical effects of the solid-liquid interface. We analyze mechanically and thermally stable metallic junctions with a predefined quantized conductance of 1-5 G0 in experiment and atomistic simulation. Atomistic modeling of structural and conductance properties elucidates bistable electrode reconstruction as the underlying mechanism of the device. Independent room temperature operation of two transistors at low voltage demonstrates intriguing perspectives for quantum electronics and logics on the atomic scale.
迄今为止，可主动切换的原子尺度器件，尤其是晶体管的可控制造仍然难以实现。在此，我们通过一种全新的开关机制来解释原子尺度三端器件的工作原理，该机制基于原子层面双稳态、自稳定的电极接触重构：虽然该器件是通过电化学沉积制造的，但其完全基于固液界面的机械效应运行。我们在实验和原子模拟中分析了具有1 - 5 G0预定义量子化电导的机械和热稳定金属结。对结构和电导特性的原子建模阐明了双稳态电极重构是该器件的潜在机制。两个晶体管在低电压下的独立室温操作展示了原子尺度量子电子学和逻辑的有趣前景。
