Lu Tao, Yang Lan, van Loon Rob V A, Polman Albert, Vahala Kerry J
Applied Physics Department, California Institute of Technology, Pasadena, California 91125, USA.
Opt Lett. 2009 Feb 15;34(4):482-4. doi: 10.1364/ol.34.000482.
We demonstrate an erbium-doped silica toroidal microcavity upconversion laser on a silicon chip lasing in the visible spectral range (510-580 nm). The microcavity is pumped at 1458 nm by a tapered optical fiber coupled to the cavity and the lasing threshold is 690 muW. Lasing is observed at room temperature despite the high nonradiative relaxation rates of Er in pure silica that usually precludes upconversion lasing from higher excited states. This is attributed to the very high circulating pump power in the high-Q microcavity (Q>10(7)).
我们展示了一种在硅芯片上的掺铒二氧化硅环形微腔上转换激光器,其在可见光谱范围(510 - 580纳米)内激射。该微腔由一根耦合到腔的锥形光纤在1458纳米处泵浦,激射阈值为690微瓦。尽管在纯二氧化硅中铒的非辐射弛豫速率很高,通常会阻止从更高激发态进行上转换激射,但在室温下仍观察到了激射现象。这归因于高Q值微腔(Q>10(7))中极高的循环泵浦功率。