Hsu Hsiu-Sheng, Cai Can, Armani Andrea M
Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, USA.
Opt Express. 2009 Dec 7;17(25):23265-71. doi: 10.1364/OE.17.023265.
Ultra-low threshold lasers which operate in the telecommunications band and which can be integrated with other CMOS compatible elements have numerous applications in satellite communications, biochemical detection and optical computing. To achieve sub-mW lasing thresholds, it is necessary to optimize both the gain medium and the pump method. One of the most promising methods is to use rare-earth ions in a co- or tri-dopant configuration, where the lasing of the primary dopant is enhanced by the secondary one, thus improving the efficiency of the overall system. Here, we demonstrate an Erbium:Ytterbium co-doped microcavity-based laser which is lithographically fabricated on a silicon substrate. The quality factor and pump threshold are experimentally determined for a series of erbium and ytterbium doping concentrations, verifying the inter-dependent relationship between the two dopants. The lasing threshold of the optimized device is 4.2 microW.
工作在电信波段且可与其他CMOS兼容元件集成的超低阈值激光器在卫星通信、生化检测和光学计算中有众多应用。为实现亚毫瓦的激光阈值，有必要优化增益介质和泵浦方法。最有前景的方法之一是在共掺杂或三掺杂配置中使用稀土离子，其中主掺杂剂的激光发射由次掺杂剂增强，从而提高整个系统的效率。在此，我们展示了一种基于铒镱共掺杂微腔的激光器，它是通过光刻技术在硅衬底上制造的。针对一系列铒和镱的掺杂浓度，通过实验确定了品质因数和泵浦阈值，验证了两种掺杂剂之间的相互依存关系。优化后的器件的激光阈值为4.2微瓦。
